Semiconductor image sensor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWEN-HAU WU, KENG-YU CHOU, CHUN-HAO CHUANG, WEI-CHIEH CHIANG, CHIEN-HSIEN TSENG, KAZUAKI HASHIMOTO
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Abstract
A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, an isolation structure surrounding the pixel sensor and disposed in the substrate, a dielectric layer disposed over the pixel sensor on the front side of the substrate, and a plurality of conductive structures disposed in the dielectric layer and arranged to align with the isolation structure.
Claims20
A back side illumination (BSI) image sensor comprising:
- a substrate comprising a front side and a back side opposite to the front side;
- a pixel sensor in the substrate;
- a logic device disposed over the front side of the substrate;
- an isolation structure surrounding the pixel sensor in the substrate;
- an interconnection structure over the substrate on the front side;
- a first reflective structure disposed in the interconnection structure and aligned to the isolation structure;
- and
- a second reflective structure disposed in the interconnection structure and overlapping at least a portion of the pixel sensor,
- wherein the first reflective structure is entirely overlapped by the isolation structure in a direction normal to the substrate, and the first reflective structure is separated from the logic device.
A back side illumination (BSI) image sensor comprising:
- a substrate comprising a front side and a back side opposite to the front side;
- a pixel sensor in the substrate;
- a logic device disposed over the front side of the substrate;
- an isolation structure surrounding the pixel sensor in the substrate;
- a dielectric layer over the pixel sensor on the front side of the substrate;
- and
- a plurality of bar-like conductive structures disposed in the dielectric layer and arranged to align with the isolation structure,
- wherein each of the bar-like conductive structures is entirely overlapped by the isolation structure in a direction normal to the substrate, at least one of the bar-like conductive structures is separated from the logic device, the isolation structure further comprises an insulating material portion and a conductive coating, and sidewalls of the insulating material portion are lined with the conductive coating.
A back side illumination (BSI) image sensor comprising:
- a substrate comprising a front side and a back side opposite to the front side;
- a pixel sensor in the substrate;
- a logic device disposed over the front side of the substrate;
- an isolation structure surrounding the pixel sensor in the substrate;
- a dielectric layer over the pixel sensor on the front side of the substrate;
- and
- a frame-like conductive structure disposed in the dielectric layer and arranged to align with and entirely overlapped by the isolation structure in a direction normal to the substrate,
- wherein the frame-like conductive structure is separated from the logic device, the isolation structure further comprises an insulating material portion and a conductive coating, and sidewalls of the insulating material portion are lined with the conductive coating.
Dependencies are inferred from the claim text.