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US 2020/0091206 A1Published application
Solid-state imaging device, method of manufacturing the same, and electronic equipment
AssigneeSony Corporation
InventorsSusumu Hiyama, Kazufumi Watanabe
Life of this patent
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Abstract
A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film.
Claims17
1-20. (canceled)
An imaging device, comprising:
- a first photoelectric conversion element;
- a second photoelectric conversion element adjacent to the first photoelectric conversion element;
- a third photoelectric conversion element adjacent to the first photoelectric conversion element;
- a first groove portion provided between the first photoelectric conversion element and the second photoelectric conversion element;
- a second groove portion provided between the first photoelectric conversion element and the third photoelectric conversion element;
- a first film disposed, at least in part, in the first groove portion and the second groove portion;
- and
- a second film extending from a light-incident side of the second photelectric conversion element to a light-incident side of the third photelectric conversion element.
5 more elements
Dependencies are inferred from the claim text.