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US 2020/0091188 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeSK hynix Inc.
InventorNam Jae LEE
Life of this patent
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Abstract
A method of manufacturing a serniconductor device includes forming holes passing through a stacked structure, surrounding channel structures, and replacing some of the materials of the stacked structure through the holes.
Claims17
A method of manufacturing a semiconductor device, the method comprising:
- forming a stacked structure, the stacked structure comprising first material layers and second material layers that are alternately stacked in a vertical direct on;
- forming channel structures passing through the stacked structure;
- forming holes passing through the stacked structure;
- and
- forming material patterns that replace the second material layers through the holes.
2 more elements
A semiconductor device, comprising:
- interlayer insulating layers and conductive patterns that are alternately stacked in a vertical direction;
- first holes arranged in a first horizontal direction crossing the vertical direction and passing through the interlayer insulating layers and the conductive patterns;
- second holes arranged in the first horizontal direction and passing through the interlayer insulating layers and the conductive patterns;
- channel structures that are arranged between the first holes and the second holes, the channel structures passing through the interlayer insulating layers and the conductive patterns;
- and
- vertical structures filling the first holes and the second holes and vertical structures including protruding portions that protrude toward the adjacent conductive patterns.
3 more elements
A semiconductor device, comprising:
- interlayer insulating layers and conductive patterns that are alternately stacked in a vertical direction;
- first holes arranged in a first horizontal direction crossing the vertical direction and passing through the interlayer insulating layers and the conductive patterns;
- second holes arranged in the first horizontal direction and passing through the interlayer insulating layers and the conductive patterns;
- channel structures that are arranged between the first holes and the second holes, the channel structures passing through the interlayer insulating layers and the conductive patterns;
- a sidewall insulating layer covering a sidewall of each of the first and second holes;
- and
- a conductive contact pillar filling each of the first and second holes and formed on the sidewall insulating layer.
4 more elements
Dependencies are inferred from the claim text.