Semiconductor device and manufacturing method of the same

A semiconductor device, comprising:

• a first stacked structure including first interlayer insulating layers and first conductive patterns stacked alternately with each other in a first direction;
• a second stacked structure including second interlayer insulating layers and second conductive patterns stacked alternately with each other in the first direction and arranged over the first stacked structure;
• and
• a first support including a first upper pillar passing through the second stacked structure and including at least two first lower pillars passing through the first stacked structure,
• wherein the first upper pillar extends from the at least two first lower pillars in the first direction.