Semiconductor memory device
AssigneeToshiba Memory Corporation
InventorsHarumi SEKI, Yuichiro MITANI, Takamitsu ISHIHARA
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a semiconductor memory device includes: a first interconnect layer; a second interconnect layer adjacent to the first interconnect layer; a semiconductor layer between the first and second interconnect layers; a first charge storage layer between the first interconnect layer and the semiconductor layer; and a second charge storage layer between the second interconnect layer and the semiconductor layer. A first distance between the first and second interconnect layers is shorter than a second distance between the first and second charge storage layers.
Claims17
A semiconductor memory device comprising:
- a first interconnect layer extending in a first direction;
- a second interconnect layer provided to be adjacent to the first interconnect layer in a second direction intersecting with the first direction, and extending in the first direction;
- a first semiconductor layer provided between the first interconnect layer and the second interconnect layer, and extending in a third direction intersecting with the first direction and the second direction;
- a first charge storage layer provided between the first interconnect layer and the first semiconductor layer in the second direction;
- and
- a second charge storage layer provided between the second interconnect layer and the first semiconductor layer in the second direction,
- wherein a first distance between the first interconnect layer and the second interconnect layer in the second direction is shorter than a second distance between the first charge storage layer and the second charge storage layer in the second direction.
Dependencies are inferred from the claim text.