Semiconductor device and method of fabricating the same
AssigneeToshiba Memory Corporation
InventorMasaki NOGUCHI
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Abstract
A semiconductor device includes a semiconductor layer, a charge storage layer provided on a surface of the semiconductor layer via a tunnel insulating film, and an electrode layer provided on a surface of the charge storage layer via a block insulating film. The tunnel insulating film includes a plurality of first silicon oxynitride films which are provided between the semiconductor layer and the charge storage layer. The tunnel insulating film further includes a silicon oxide film provided between the first silicon oxynitride films and/or a second silicon oxynitride film which is provided between the first silicon oxynitride films and has an oxygen concentration higher than an oxygen concentration in the first silicon oxynitride film.
Claims18
A semiconductor device, comprising:
- a semiconductor layer;
- a charge storage layer provided on a surface of the semiconductor layer with a tunnel insulating film between the charge storage layer and the semiconductor layer;
- and
- an electrode layer provided on a surface of the charge storage layer with a block insulating film between the charge storage layer and the electrode layer, wherein
- the tunnel insulating film includes:
- a plurality of first silicon oxynitride films which are provided between the semiconductor layer and the charge storage layer, and
- a silicon oxide film provided between the first silicon oxynitride films and/or a second silicon oxynitride film provided between the first silicon oxynitride films and having an oxygen concentration higher than the oxygen concentration in the first silicon oxynitride films.
A method of fabricating a semiconductor device, comprising:
- forming a tunnel insulating film on a surface of a semiconductor layer or a charge storage layer, the tunnel insulating film including a plurality of first silicon oxynitride films, and a silicon oxide film provided between the first silicon oxynitride films and/or a second silicon oxynitride film provided between the first silicon oxynitride films and having an oxygen concentration higher than an oxygen concentration in the first silicon oxynitride film;
- and
- forming the charge storage layer or the semiconductor layer on a surface of the tunnel insulating film.
Dependencies are inferred from the claim text.