Integrated circuit device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJang-gn YUN, Jae-duk LEE
Life of this patent
Estimating the term…
Abstract
An integrated circuit device includes word line structures, insulating structures, a channel hole, and charge trap patterns. The word line structures and the insulating structures are interleaved with each other and extend in a horizontal direction parallel to a main surface of a substrate, and overlap one another in a vertical direction. The channel hole passes through the word line structures and the insulating structures in the vertical direction. The charge trap patterns are located in the channel hole, and are spaced apart from one another in the vertical direction with a local insulating region therebetween.
Claims22
An integrated circuit device comprising:
- a plurality of word line structures, extending in a horizontal direction parallel to a main surface of a substrate, and overlapping one another in a vertical direction perpendicular to the main surface of the substrate;
- a plurality of insulating structures located between the plurality of word line structures and extending in the horizontal direction;
- a channel film extending in the vertical direction in a channel hole that passes through the plurality of word line structures and the plurality of insulating structures;
- and
- a plurality of charge trap patterns located in the channel hole between the plurality of word line structures and the channel film, and spaced apart from one another in the vertical direction with a local insulating region therebetween.
13-18. (canceled)
An integrated circuit device comprising:
- a channel film extending in a vertical direction perpendicular to a main surface of a substrate;
- a plurality of word line structures located around the channel film, extending in a horizontal direction parallel to the main surface of the substrate, and overlapping one another in the vertical direction;
- a plurality of insulating structures located around the channel film and each comprising an air-gap located between the plurality of word line structures;
- a plurality of charge trap patterns located between the plurality of word line structures and the channel film and spaced apart from one another in the vertical direction with the air-gap therebetween;
- and
- a plurality of blocking dielectric patterns located between the plurality of word line structures and the plurality of charge trap patterns, and spaced apart from one another in the vertical direction with the air-gap therebetween,
- wherein the channel film comprises a plurality of first curved portions facing the air-gap.
23-42. (canceled)
An integrated circuit device comprising:
- a plurality of word line structures and a plurality of insulating structures interleaved with each other and extending in a horizontal direction parallel to a main surface of a substrate, and overlapping one another in a vertical direction;
- a channel hole that passes through the plurality of word line structures and the plurality of insulating structures in the vertical direction;
- and
- a plurality of charge trap patterns located in the channel hole, and spaced apart from one another in the vertical direction with a local insulating region therebetween.
Dependencies are inferred from the claim text.