Semiconductor device and method of manufacturing same

A semiconductor memory device, comprising:

• a substrate having a first semiconductor material at a surface thereof;
• an alternating stack of electrode layers and insulating layers above the surface of the substrate;
• a memory column extending in a first direction orthogonal to the surface of the substrate through the electrode layers and the insulating layers, the memory column comprising a single-crystal semiconductor material on an outer periphery facing the electrode layers and the insulating layers;
• a plurality of tunnel insulating films between the memory column and the electrode layers, the first insulating films being spaced from each other in the first direction, each first insulating film being in a position corresponding to one of the electrode layers;
• a charge storage layer between each of the tunnel insulating films and each of the electrode layers in a second direction parallel to the surface of the substrate;
• and
• a block insulating film between the charge storage layer and each of the electrode layers.

A method of manufacturing a semiconductor device, comprising:

• forming a plurality of first semiconductor layers and a plurality of second semiconductor layers in an alternating stack above a substrate;
• forming a hole extending though the alternating stack towards the substrate;
• removing the first semiconductor layers;
• forming insulating layers between the second semiconductor layers after removing the first semiconductor layers;
• growing a third semiconductor layer in the hole, the third semiconductor layer directly contacting the second semiconductor layers and comprising a single-crystal semiconductor material;
• removing the second semiconductor layers;
• and
• forming electrode layers between the insulating layers.