Vertical memory device and method of fabrication the same
AssigneeSamsung Electronics Co., Ltd.
InventorSeok Cheon BAEK
Life of this patent
Estimating the term…
Abstract
A vertical memory device includes a substrate having a peripheral circuit interconnection, lower word lines stacked on the substrate, vertical channel structures passing through the lower word lines, a first cell contact plug including a bottom end lower than a bottom surface of a first lower word line and being connected to the first lower word line, and lower insulating layers and first lower mold patterns positioned beneath the first lower word line and stacked alternately on each other from the substrate.
Claims29
A vertical memory device, comprising:
- a substrate having a peripheral circuit interconnection;
- a plurality of lower word lines stacked on the substrate;
- a plurality of vertical channel structures passing through the lower word lines;
- a first cell contact plug including a bottom end lower than a bottom surface of a first lower word line of the lower word lines, wherein the first cell contact plug is electrically connected to the first lower word line;
- and
- a plurality of lower insulating layers and a plurality of first lower mold patterns positioned beneath the first lower word line and stacked alternately on each other from the substrate.
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25-26. (canceled)
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A vertical memory device, comprising:
- a substrate having a peripheral circuit interconnection;
- and
- a lower stack structure on the substrate, the lower stack structure comprising:
- a plurality of lower word lines stacked in a staircase structure, each lower word line having a lower gate line, a first lower extension line, a second lower extension line, a first lower pad and a second lower pad, wherein the first lower extension line is extended in a first direction from a first side of the lower gate line, the second lower extension line is extended in the first direction from a second side of the lower gate line, the first lower pad is extended in a second direction crossing the first direction from an end of the first lower extension line and the second lower pad is extended in the second direction from an end of the second lower extension line;
- a plurality of vertical channel structures passing through the lower gate line of each of the lower word lines;
- and
- a plurality of cell contact plugs each being connected to a corresponding lower word line of the lower word lines, each of the cell contact plugs having a bottom end lower than a bottom surface of the corresponding lower word line.
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A vertical memory device comprising:
- a substrate including a peripheral circuit interconnection;
- a first isolation trench;
- a second isolation trench;
- a plurality of lower word lines disposed between the first isolation trench and the second isolation trench,
- wherein the lower word lines each includes a lower gate line, a first lower extension line extending in a first direction from a first side of the lower gate line, a second lower extension line extending in the first direction from a second side of the lower gate line and a first lower pad extending in a second direction crossing the first direction from an end of the first lower extension line, and wherein the first lower pad of each of the lower word lines is stacked in a staircase structure;
- a plurality of lower mold patterns stacked in a staircase structure, wherein each of the lower mold patterns is positioned at the same height from the substrate with a corresponding lower word line of the lower word lines;
- and
- a cell contact plug passing through a first lower pad of one of the lower word lines.
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Dependencies are inferred from the claim text.