Semiconductor memory device

A semiconductor memory device, comprising:

• a stacked structure in which an interlayer insulating layer and a conductive layer are alternately stacked in a first direction;
• a channel layer extending through the stacked structure in the first direction;
• a first insulating layer between the channel layer and the conductive layer in a second direction intersecting the first direction;
• a second insulating layer between the first insulating layer and the conductive layer in the second direction;
• a storage region between the first insulating layer and the second insulating layer in the second direction and including metal or semiconductor material;
• and
• a coating layer surrounding the storage region and comprising silicon and nitrogen, the coating layer being between the storage region and the second insulating layer in the second direction and between the storage region and the first insulating layer in the second direction.

A semiconductor memory device, comprising:

• a plurality of conductive layers stacked alternately with a plurality of insulating layers;
• a cylindrical semiconductor member extending through the plurality of conductive layers and the plurality of insulating layers in a first direction, a channel layer comprising a semiconductor material being on an outer peripheral surface of the cylindrical semiconductor member;
• a first insulating layer being on the outer peripheral surface of the cylindrical semiconductor member between the channel layer and each of the plurality of conductive layers and the plurality of insulating layers in a second direction intersecting the first direction;
• a plurality of second insulating layers between the first insulating layer and each of the conductive layers in the second direction;
• a plurality of storage regions between the first insulating layer and each of the second insulating layer in the second direction and including metal or semiconductor material;
• and
• a coating layer surrounding each storage region and comprising silicon and nitrogen, the coating layer being between each storage region and each second insulating layer in the second direction and between each storage region and the first insulating layer in the second direction.