Three-dimensional memory devices and methods for forming the same
AssigneeYangtze Memory Technologies Co., Ltd.
InventorJun Liu
Life of this patent
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Abstract
Embodiments of three-dimensional (3D) memory devices and methods for forming the 3D memory devices are disclosed. In an example, a 3D memory device includes a substrate, a peripheral device disposed on the substrate, a peripheral interconnect layer disposed above the peripheral device, a first source plate disposed above and electrically connected to the peripheral interconnect layer, a first memory stack disposed on the first source plate, a first memory string extending vertically through the first memory stack and in contact with the first source plate, and a first bit line disposed above and electrically connected to the first memory string and the peripheral device.
Claims20
A three-dimensional (3D) memory device, comprising:
- a substrate;
- a peripheral device disposed on the substrate;
- a peripheral interconnect layer disposed above the peripheral device;
- a first source plate disposed above and electrically connected to the peripheral interconnect layer;
- a first memory stack disposed on the first source plate;
- a first memory string extending vertically through the first memory stack and in contact with the first source plate;
- and
- a first bit line disposed above and electrically connected to the first memory string and the peripheral device.
A three-dimensional (3D) memory device, comprising:
- a substrate;
- a peripheral device comprising a multiplexer disposed on the substrate;
- a first memory stack disposed above the peripheral device;
- a first memory string extending vertically through the first memory stack;
- a first bit line disposed above and electrically connected to the first memory string and the multiplexer;
- a second memory stack disposed above the first bit line;
- a second memory string extending vertically through the second memory stack;
- and
- a second bit line disposed above and electrically connected to the second memory string and the multiplexer,
- wherein the multiplexer is configured to select one of the first and second memory strings.
A method for forming a three-dimensional (3D) memory device, comprising:
- forming a peripheral device on a substrate;
- forming a peripheral interconnect layer above the peripheral device;
- forming a first source plate above and electrically connected to the peripheral interconnect layer;
- forming a first memory string extending vertically through a first memory stack, the first memory string being above and in contact with the first source plate;
- and
- forming a first bit line above and electrically connected to the first memory string and the peripheral device.
Dependencies are inferred from the claim text.