Memory device

A memory device comprising:

• a first conductive layer;
• a second conductive layer;
• and
• a first layer provided between the first conductive layer and the second conductive layer, the first layer including aluminum oxide, the aluminum oxide containing at least one first element selected from the group consisting of magnesium (Mg), silicon (Si), hafnium (Hf), tungsten (W), and ruthenium (Ru), and the aluminum oxide being κ (kappa)-aluminum oxide.

A memory device comprising:

• a stacked body including a plurality of conductive layers arranged in a first direction;
• a semiconductor layer provided in the stacked body and extending in the first direction;
• and
• a first layer provided between at least one of the conductive layers and the semiconductor layer, the first layer including aluminum oxide, the aluminum oxide containing at least one first element selected from the group consisting of magnesium (Mg), silicon (Si), hafnium (Hf), tungsten (W), and ruthenium (Ru), and the aluminum oxide being κ (kappa)-aluminum oxide.

A memory device comprising:

• a semiconductor layer;
• a gate electrode;
• and
• a first layer provided between the semiconductor layer and the gate electrode, the first layer including aluminum oxide, the aluminum oxide containing at least one first element selected from the group consisting of magnesium (Mg), silicon (Si), hafnium (Hf), tungsten (W), and ruthenium (Ru), and the aluminum oxide being κ (kappa)-aluminum oxide.