Semiconductor Device
AssigneeRaydium Semiconductor Corporation
InventorsKUAN-HUNG CHOU, PO-CHANG JEN, MING-HENG TSAI
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Abstract
A semiconductor device is disclosed. The semiconductor device includes a substrate, a well, an oxidation layer, a gate electrode and a shared source/drain electrode. The substrate has a first surface and a second surface opposite to each other. The well is formed in the substrate. The substrate and the well have a first conductivity type and a second conductivity type respectively. The oxidation layer is formed in the well. The gate electrode is formed above the first surface and has a first opening. The shared source/drain electrode is formed near the first surface in the oxidation layer and exposed from the first opening. The shared source/drain electrode has the first conductivity type.
Claims10
A semiconductor device, comprising:
- a substrate having a first surface and a second surface, wherein the first surface and the second surface are opposite to each other;
- a well formed in the substrate, wherein the substrate and the well have a first conductivity type and a second conductivity type respectively;
- an oxidation layer formed in the well;
- a gate electrode formed above the first surface and having a first opening;
- and
- a shared source/drain electrode formed near the first surface in the oxidation layer and exposed from the first opening, wherein the shared source/drain electrode has the first conductivity type.
Dependencies are inferred from the claim text.