Structure and formation method of hybrid semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHung-Li CHIANG, I-Sheng CHEN, Tzu-Chiang CHEN
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Abstract
A structure and a formation method of hybrid semiconductor devices are provided. The structure includes a substrate and a fin structure over the substrate. The fin structure has a channel height. The structure also includes a stack of nanostructures over the substrate. The channel height is greater than a lateral distance between the fin structure and the stack of the nanostructures. The structure further includes a gate stack over the nanostructures. The nanostructures are separated from each other by portions of the gate stack.
Claims20
A hybrid semiconductor device structure, comprising:
- a substrate;
- a fin structure over the substrate, wherein the fin structure has a channel height;
- a stack of nanostructures over the substrate, wherein the channel height is greater than a lateral distance between the fin structure and the stack of the nanostructures;
- and
- a gate stack over the nanostructures, wherein the nanostructures are separated from each other by portions of the gate stack.
A method for forming a hybrid semiconductor device structure, comprising:
- providing a substrate having a first region and a second region;
- epitaxially forming alternating stacked films over the substrate;
- forming a trench in the alternating stacked films over the first region;
- and
- after forming the trench, patterning the alternating stacked films over the second region to obtain an alternating stacked fin.
A method for forming a hybrid semiconductor device structure, comprising:
- providing a substrate having a first region and a second region;
- alternately and sequentially depositing a first material layer and a second material layer to form alternating stacked films over the first region and the second region of the substrate;
- partially removing the alternating stacked films to form a trench over the first region;
- and
- after the trench is formed, patterning the alternating stacked films over the second region to form an alternating stacked fin.
Dependencies are inferred from the claim text.