Back to results
US 2020/0091143 A1Published application
Gate cut structures
AssigneeGlobalfoundries Inc.
InventorsHui ZANG, Ruilong XIE, Laertis ECONOMIKOS
Life of this patent
Estimating the term…
Abstract
The present disclosure generally relates to semiconductor structures and, more particularly, to gate cut structures and methods of manufacture. The structure includes: a plurality of gate structures comprising source and drain regions and sidewall spacers comprised of different dielectric materials; and contacts connecting to the source and drain regions and isolated from the gate structures by the different dielectric materials.
Claims20
A structure, comprising:
- a plurality of gate structures comprising source and drain regions and sidewall spacers comprised of different dielectric materials;
- and
- contacts connecting to the source and drain regions and isolated from the gate structures by the different dielectric materials.
A structure, comprising:
- a plurality of gate structures comprising source and drain regions and sidewall spacers comprised of a low-k dielectric material and a high-k dielectric material;
- and
- contacts connecting to the source and drain regions.
A method, comprising:
- forming a plurality of gate structures comprising source and drain regions and sidewall spacers;
- pulling down the sidewall spacers to form recessed sidewall spacers;
- cutting the gate structures to form gate cuts;
- and
- depositing a material simultaneously over the recessed sidewall spacers and the gate cuts.
2 more elements
Dependencies are inferred from the claim text.