3-d stacking semiconductor assembly having heat dissipation characteristics
AssigneeBridge Semiconductor Corporation
InventorsCharles W. C. LIN, Chia-Chung WANG
Life of this patent
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Abstract
A semiconductor assembly having heat dissipation characteristics includes stacked semiconductor chips thermally conductible to a thermal pad of an interconnect substrate and electrically connected to the interconnect substrate through bonding wire. The bonding wires extending from a primary routing circuitry in between the stacked chips can accommodate the height difference between the stacked chips and the interconnect substrate. These wires can also effectively compensate for the thermal expansion mismatch between the stacked chips and the interconnect substrate, thereby allowing a higher manufacturing yield and better reliability.
Claims9
A three-dimensional semiconductor assembly, comprising:
- a stacked semiconductor subassembly that includes a primary routing circuitry, a first device and a second device, wherein (i) the primary routing circuitry has a first surface in a first direction, a second surface in an opposite second direction, first conductive pads at the first surface, and second conductive pads at the second surface electrically connected to the first conductive pads, (ii) the first device is disposed over the first surface of the primary routing circuitry and electrically coupled to the primary routing circuitry through the first conductive pads, and (iii) the second device is disposed over the second surface of the primary routing circuitry and electrically coupled to the primary routing circuitry through the second conductive pads;
- an interconnect substrate that includes a thermal pad and a surrounding layer, wherein (i) the thermal pad has a front side facing in the first direction and the front side of the thermal pad is attached to the second device by a thermal conducting material, (ii) the surrounding layer has a dielectric layer and contact pads, (iii) the dielectric layer is bonded to sidewalls of the thermal pad and has a front surface facing in the first direction, and (iv) the contact pads are disposed on the front surface of the dielectric layer;
- a plurality of terminals that are electrically coupled to the contact pads and disposed about peripheral edges of the stacked semiconductor subassembly;
- and
- a plurality of bonding wires that are attached to the primary routing circuitry and the contact pads of the surrounding layer to electrically connect the stacked semiconductor subassembly to the terminals.
Dependencies are inferred from the claim text.