Stacked semiconductor system having interposer of half-etched and molded sheet metal

A semiconductor package comprising:

• a sheet having a first surface in a first plane, a second surface in a second plane parallel to the first plane, and a uniform first height between the first surface and the second surface;
• a first semiconductor die attached to the first surface via a first set of terminals;
• a second semiconductor die attached to the first surface via second set of terminals, wherein a third set of terminals of the second semiconductor die face away from the sheet;
• a portion of a first leadframe attached to the third set of terminals;
• the sheet patterned in metallic zones separated by gaps, the zones including at least a first metallic zone having a metal of the uniform first height across the entire first metallic zone, and at least a second metallic zone having the metal of a first height and a second height, the second height being smaller than the first height, and the uniform first height equal to the first height;
• and
• a portion of a second leadframe attached to the metallic zones;

A semiconductor package comprising:

• an interposer including:
• a plurality of conductive zones, including at least a first zone having a metal of a first height, and at least a second zone having the metal of a second height and a third height, the third height being smaller than the second height and the second height equal to the first height;
• and
• a plurality of insulating zones defined in between the plurality of conductive zones, and in an area between the first and the second heights;
• a semiconductor die attached to the interposer;
• and
• a portion of a leadframe attached to the interposer.