Substrate treatment apparatus, method of manufacturing semiconductor device and workpiece substrate
AssigneeToshiba Memory Corporation
InventorsFuyuma Ito, Yasuhito Yoshimizu, Hakuba Kitagawa
Life of this patent
Estimating the term…
Abstract
In one embodiment, a substrate treatment apparatus includes a substrate holder configured to hold a substrate provided with a film. The apparatus further includes a film treatment module configured to treat the film in accordance with warpage of the substrate such that the film includes a first region having a first film quality or a first film thickness and a second region having a second film quality or a second film thickness different from the first film quality or the first film thickness.
Claims20
A substrate treatment apparatus comprising:
- a substrate holder configured to hold a substrate provided with a film;
- and
- a film treatment module configured to treat the film in accordance with warpage of the substrate such that the film includes a first region having a first film quality or a first film thickness and a second region having a second film quality or a second film thickness different from the first film quality or the first film thickness.
A method of manufacturing a semiconductor device, comprising:
- preparing a substrate having a first face on which a device is formed,
- forming a film on an opposite face of the first face of the substrate;
- and
- performing a first process that partially modifies the film.
A workpiece substrate comprising:
- a substrate having a first face on which a device is formed;
- and
- a film provided on an opposite face of the first face of the substrate and including a first region and a second region that surrounds or sandwiches at least a portion of the first region,
- wherein a film quality or a film thickness of the film in the first region is different from a film quality or a film thickness of the film in the second region.
Dependencies are inferred from the claim text.