Package structure

A package structure, comprising:

• a semiconductor die having an active surface and a backside surface opposite to the active surface;
• a dielectric layer located on the backside surface of the semiconductor die;
• a warpage control layer sandwiched in between the dielectric layer and the backside surface of the semiconductor die, wherein the warpage control layer is formed on the backside surface of the semiconductor die by plasma-enhanced chemical vapor deposition at temperatures below 200° C. so that the warpage control layer has a Young's Modulus of 100 GPa or more;
• and
• a redistribution layer located on the active surface of the semiconductor die and electrically connected to the semiconductor die.

A package structure, comprising:

• a semiconductor die having an active surface and a backside surface opposite to the active surface;
• a silicon nitride layer disposed on the backside surface of the semiconductor die, wherein the silicon nitride layer is formed by plasma-enhanced chemical vapor deposition at temperatures below 200° C.;
• a plurality of through insulator vias surrounding the semiconductor die and the silicon nitride layer;
• an insulating encapsulant encapsulating the semiconductor die and the silicon nitride layer;
• and
• a redistribution layer located on the insulating encapsulant and over the active surface of the semiconductor die.