Semiconductor device and method of manufacturing the same
AssigneeToshiba Memory Corporation
InventorsSatoshi WAKATSUKI, Masayuki KITAMURA, Atsuko SAKATA
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Abstract
In one embodiment, a semiconductor device includes a substrate, and a plurality of insulating layers provided on the substrate. The device further includes a plurality of electrode layers provided on the substrate alternately with the plurality of insulating layers and including metal atoms and impurity atoms different from the metal atoms, lattice spacing between the metal atoms in the electrode layers being greater than lattice spacing between the metal atoms in an elemental substance of the metal atoms.
Claims20
A semiconductor device comprising:
- a substrate;
- a plurality of insulating layers provided on the substrate;
- and
- a plurality of electrode layers provided on the substrate alternately with the plurality of insulating layers and including metal atoms and impurity atoms different from the metal atoms, lattice spacing between the metal atoms in the electrode layers being greater than lattice spacing between the metal atoms in an elemental substance of the metal atoms.
A semiconductor device comprising:
- a substrate;
- an insulator provided on the substrate;
- and
- a plug provided in the insulator and including metal atoms and impurity atoms different from the metal atoms, lattice spacing between the metal atoms in the plug being greater than lattice spacing between the metal atoms in an elemental substance of the metal atoms.
A method of manufacturing a semiconductor device, comprising:
- forming a metal layer that is provided in a film on a substrate and includes metal atoms, lattice spacing between the metal atoms having a first value;
- and
- increasing the lattice spacing between the metal atoms from the first value to a second value by introducing impurity atoms different from the metal atoms into the metal layer.
Dependencies are inferred from the claim text.