Semiconductor device
AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorsHiroaki TAKAHASHI, Shoichi SAKAGUCHI
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate, a multilayer wiring layer on the semiconductor substrate, an insulation layer above the multilayer wiring layer, first and second metal wirings on the insulation layer, and a resin film that covers the insulation layer and the first second metal wirings. The resin film has a thickness about three times a thickness of the first and second metal wirings in a direction perpendicular to the semiconductor substrate, and a thickness of each of the first and second metal wirings is greater than a thickness of a wiring included in the multilayer wiring layer.
Claims20
A semiconductor device comprising:
- a semiconductor substrate;
- a multilayer wiring layer on the semiconductor substrate;
- an insulation layer above the multilayer wiring layer;
- first and second metal wirings on the insulation layer;
- and
- a resin film that covers the insulation layer and the first second metal wirings, wherein
- the resin film has a thickness about three times a thickness of the first and second metal wirings in a direction perpendicular to the semiconductor substrate, and
- a thickness of each of the first and second metal wirings is greater than a thickness of a wiring included in the multilayer wiring layer.
A method of manufacturing a semiconductor device, comprising:
- forming a multilayer wiring layer on a semiconductor substrate;
- forming an insulation layer above the multilayer wiring layer;
- forming a resist having openings on the insulation layer;
- forming first and second wirings in the openings of the resist;
- removing the resist;
- and
- applying a resin film to cover the insulation layer and the first and second wirings, wherein
- the resin film has a thickness about three times a thickness of the first and second metal wirings in a direction perpendicular to the semiconductor substrate, and
- a thickness of each of the first and second metal wirings is greater than a thickness of a wiring included in the multilayer wiring layer.
Dependencies are inferred from the claim text.