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US 2020/0091067 A1Published application
Liner-free and partial liner-free contact/via structures
AssigneeInternational Business Machines Corporation
InventorChih-Chao Yang
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Abstract
A liner-free or partial liner-free contact/via structure that is embedded within a dielectric capping layer and positioned between an electrically conductive structure and an overlying contact structure is provided.
Claims18
A semiconductor structure comprising:
- a lower portion of a volume expanded electrically conductive structure embedded in a first dielectric material layer;
- a dielectric capping layer located on the first dielectric material layer, wherein the dielectric capping layer has a contact via/opening comprising a lower portion and an upper portion, wherein the lower portion of the contact/via opening contains an upper portion of the volume expanded electrically conductive structure;
- a contact/via diffusion barrier liner and a contact/via structure present in the upper portion of the contact/via opening;
- and
- a contact structure located above the dielectric capping layer, the contact/via diffusion barrier liner, and the contact/via structure, wherein the contact structure is embedded in a second dielectric material layer.
2 more elements
A semiconductor structure comprising:
- a lower portion of a volume expanded electrically conductive structure embedded in a first dielectric material layer;
- a dielectric capping layer located on the first dielectric material layer, wherein the dielectric capping layer has a contact via/opening that is entirely filled with an upper portion of the volume expanded electrically conductive structure;
- and
- a contact structure located above the dielectric capping layer and the upper portion of the volume expanded electrically conductive structure, wherein the contact structure is embedded in a second dielectric material layer.
1 more element
Dependencies are inferred from the claim text.