Semiconductor device
AssigneeToshiba Memory Corporation
InventorsTaichi IWASAKI, Osamu Matsuura, Takuya Inatsuka
Life of this patent
Estimating the term…
Abstract
According to one embodiment, there is provided a semiconductor device including a stacked body, a silicon nitride film, and a titanium film. The stacked body is disposed above a substrate. The stacked body includes a conductive layer and an insulating layer disposed repeatedly in a stacking direction. The silicon nitride film extends along a surface of the substrate between the substrate and the stacked body. The titanium film extends along the surface of the substrate between the substrate and the stacked body. The titanium film constitutes a film continuous with the silicon nitride film.
Claims20
A semiconductor device comprising:
- a stacked body disposed above a substrate, the stacked body including a conductive layer and an insulating layer disposed repeatedly in a stacking direction;
- a silicon nitride film extending along a surface of the substrate between the substrate and the stacked body;
- and
- a titanium film extending along the surface of the substrate between the substrate and the stacked body, the titanium film constituting a film continuous with the silicon nitride film.
Dependencies are inferred from the claim text.