Interconnect structure with low resistivity and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShin-Yi YANG, Ming-Han LEE
Life of this patent
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Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a first conductive feature over a substrate. The method also includes forming an insulating layer over the substrate and covering the first conductive feature. The method also includes forming a first opening in the insulating layer to expose the first conductive feature. The method also includes recessing the exposed first conductive feature through the first opening, so as to form a second opening in the first conductive feature and below the first opening. The method also includes filling the first opening and the second opening with a second conductive feature.
Claims21
A method for forming a semiconductor device structure, comprising:
- forming a first conductive feature over a substrate;
- forming an insulating layer over the substrate and covering the first conductive feature;
- forming a first opening in the insulating layer to expose the first conductive feature;
- recessing the exposed first conductive feature through the first opening, so as to form a second opening in the first conductive feature and below the first opening;
- and
- filling the first opening and the second opening with a second conductive feature.
A method for forming a semiconductor device structure, comprising:
- forming a conductive feature in a first insulating layer;
- forming an etching stop layer over the first insulating layer and covering the conductive feature;
- forming a second insulating layer over the etching stop layer;
- forming a first opening in the second insulating layer over the conductive feature, so as to expose the etching stop layer;
- forming a second opening in the etching stop layer and below the first opening, so as to expose the conductive feature;
- recessing the exposed conductive feature to form a recess in the conductive feature;
- and
- successively forming a barrier liner and a fill metal material layer in the first opening, the second opening, and the recess.
15-20. (canceled)
A method for forming a semiconductor device structure, comprising:
- forming a conductive feature in a first insulating layer;
- successively forming a first etching stop layer, a second insulting layer, a second etching stop layer, and a third insulating layer over the first insulating layer and covering the conductive feature;
- forming a first opening in the third insulating layer over the conductive feature, so as to expose the second etching stop layer;
- forming a second opening in the second etching layer and the second insulating layer over the conductive feature, so as to expose the first etching stop layer;
- forming a third opening in the first etching stop layer and below the second opening, so as to expose the conductive feature;
- recessing the exposed conductive feature to form a recess in the conductive feature;
- and
- forming a fill metal material layer in the first opening, the second opening, the third opening, and the recess.
Dependencies are inferred from the claim text.