Semiconductor device and method of manufacturing semiconductor device
AssigneeToshiba Memory Corporation
InventorsShinji SAITO, Yoshitaka ONO
Life of this patent
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Abstract
A semiconductor device includes a substrate including wiring at a surface thereof, a semiconductor element on a surface of the substrate, a first solder resist on the wiring, a bonding wire connecting the wiring and the semiconductor element, and a second solder resist. The first solder resist has an opening region at which a part of the wiring is non-covered by the first solder resist, and the bonding wire connects the wiring and the semiconductor element in the opening region. The second solder resist at least partially covers the non-covered part of the wiring in the opening region.
Claims20
A semiconductor device comprising:
- a substrate including wiring at a surface thereof;
- a semiconductor element on a surface of the substrate;
- a first solder resist on the wiring, the first solder resist having an opening region at which a part of the wiring is non-covered by the first solder resist;
- a bonding wire connecting the wiring and the semiconductor element in the opening region;
- and
- a second solder resist at least partially covering the non-covered part of the wiring in the opening region.
A method of manufacturing a semiconductor device comprising:
- preparing a device including a substrate including wiring at a surface thereof, a semiconductor element on a surface of the substrate, and a first solder resist on the wiring, the first solder resist having an opening region at which a part of the wiring is exposed;
- connecting the wiring and the semiconductor element with a bonding wire in the opening region of the first solder resist;
- and
- at least partially covering the exposed part of the wiring in the opening region with a second solder resist.
Dependencies are inferred from the claim text.