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US 2020/0091044 A1Published application
Method for manufacturing semiconductor device
AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorHiroaki TAKAHASHI
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Abstract
A method for manufacturing a semiconductor device includes forming a first metal layer above a substrate of a semiconductor chip, forming a nickel layer on the first metal layer, performing a first cleaning treatment on the nickel layer with diluted hydrochloric acid having a concentration of less than 1% by weight, forming a gold layer on the nickel layer, and connecting a bonding wire to a surface of the gold layer.
Claims20
A method for manufacturing a semiconductor device, the method comprising:
- forming a first metal layer above a substrate of a semiconductor chip;
- forming a nickel layer on the first metal layer;
- performing a first cleaning treatment on the nickel layer with diluted hydrochloric acid having a concentration of less than 1% by weight;
- forming a gold layer on the nickel layer;
- and
- connecting a bonding wire to a surface of the gold layer.
3 more elements
A semiconductor device comprising:
- a substrate of a semiconductor chip;
- a first metal layer above the substrate;
- a nickel layer on the first metal layer, on which a first cleaning treatment is performed with diluted hydrochloric acid having a concentration of less than 1% by weight;
- a gold layer on the nickel layer;
- and
- a bonding wire connected to a surface of the gold layer.
3 more elements
Dependencies are inferred from the claim text.