Semiconductor package with composite thermal interface material structure and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTung-Liang SHAO, Jen-Yu WANG, Chung-Jung WU, Chih-Hang TUNG, Chen-Hua YU
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Abstract
A semiconductor package is provided. The semiconductor package includes a substrate and a semiconductor die over the substrate. A heat-dissipating feature covers the substrate and the semiconductor die, and a composite thermal interface material (TIM) structure is thermally bonded between the semiconductor die and the heat-dissipating feature. The composite TIM structure includes a metal-containing matrix material layer and polymer particles embedded in the metal-containing matrix material layer.
Claims20
A semiconductor package, comprising:
- a substrate;
- a semiconductor die over the substrate;
- a heat-dissipating feature over the substrate and covering the semiconductor die;
- and
- a composite thermal interface material (TIM) structure thermally bonded between the semiconductor die and the heat-dissipating feature, comprising:
- a metal-containing matrix material layer;
- and
- a plurality of polymer particles embedded in the metal-containing matrix material layer.
A semiconductor package, comprising:
- a heat spreader lid;
- a first semiconductor die having an upper surface covered by the heat spreader lid, wherein the upper surface of the first semiconductor die has at least one hot spot region and a region outside of the hot spot region;
- a bonding layer thermally connected between the first semiconductor die and the heat spreader lid;
- and
- a plurality of core-shell structures formed in the bonding layer, wherein each of the plurality of core-shell structures comprises a polymer core and a metal shell, and
- wherein a density of the plurality of core-shell structures above the hot spot region is greater than the density of the plurality of core-shell structures above the region outside of the hot spot region.
A method of forming a semiconductor package, comprising:
- forming a metallization stack over a semiconductor die;
- mounting a plurality of polymer particles over the metallization stack, wherein each of plurality of polymer particles is coated with a first bonding layer;
- and
- bonding a heat spreader lid with the semiconductor die by reflowing the first bonding layer, wherein a composite thermal interface material (TIM) structure is formed between the heat spreader lid and the semiconductor die during the bonding, and wherein the composite TIM structure comprises the first bonding layer and the plurality of polymer particles embedded in the first bonding layer.
Dependencies are inferred from the claim text.