Semiconductor package using high power and high frequency and method of manufacturing same
AssigneeKorea Electronics Technology Institute
InventorsJong Min YOOK, Jun Chul KIM, Dong Su KIM
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AssigneeKorea Electronics Technology Institute
InventorsJong Min YOOK, Jun Chul KIM, Dong Su KIM
Estimating the term…
Disclosed is a semiconductor package. The semiconductor package includes a semiconductor chip on which an electrode pad is disposed, at least one input/output segment disposed around a side surface of the semiconductor chip to be spaced apart from the semiconductor chip and transmitting an electric signal, and an insulating layer filled between the semiconductor chip and the input/output segment. The insulating layer is provided on the semiconductor chip and the input/output segment to fix and insulate the semiconductor chip and the input/output segment from each other. The semiconductor further includes an electrode pattern provided on the insulating layer and configured to electrically connect the electrode pad of the semiconductor chip and the input/output segment.
A semiconductor package using high power and high frequency, the semiconductor package comprising:
A method of manufacturing a semiconductor package using high power and high frequency, the method comprising:
Dependencies are inferred from the claim text.