Semiconductor structure with conductive structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPei-Chun TSAI, Wei-Sen CHANG, Tin-Hao KUO, Hao-Yi TSAI
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Abstract
A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a conductive pad formed over a substrate, and a conductive structure formed over the conductive pad. The conductive structure has a curved top surface. The semiconductor device structure also includes a protection layer between the conductive pad and the conductive structure. A lowest point of the curved top surface of the conductive structure is higher than a topmost surface of the protection layer.
Claims20
A semiconductor device structure, comprising:
- a conductive pad formed over a substrate;
- a conductive structure formed over the conductive pad, wherein the conductive structure has a curved top surface;
- and
- a protection layer between the conductive pad and the conductive structure, wherein a lowest point of the curved top surface of the conductive structure is higher than a topmost surface of the protection layer.
A semiconductor device structure, comprising:
- a protection layer formed below a substrate;
- a conductive structure formed in the protection layer, wherein the conductive structure has a curved bottom surface;
- a passivation layer formed below the protection layer;
- and
- a seed layer formed in the passivation layer, wherein the seed layer has a curved top surface, wherein the passivation layer is in direct contact with the seed layer and sidewalls of the conductive structure.
A semiconductor device structure, comprising:
- a die comprising a conductive pad;
- a conductive structure formed over the conductive pad;
- a seed layer formed over the conductive structure, wherein the seed layer and the conductive structure are made of different materials;
- and
- a passivation layer formed over the conductive structure, wherein an interface between the seed layer and the conductive structure is in direct contact with the passivation layer.
Dependencies are inferred from the claim text.