Systems and methods for improved performance in semiconductor processing

A chamber cleaning method comprising:

• forming a plasma of a fluorine-containing precursor in a semiconductor processing chamber in which an etch process utilizing a hydrogen-containing precursor has been performed;
• measuring a radical density of the hydrogen-containing precursor;
• and
• extinguishing the plasma of the fluorine-containing precursor when the radical density of the hydrogen-containing precursor reaches a pre-determined threshold.

An etching method comprising:

• flowing a hydrogen-containing precursor into a semiconductor processing chamber;
• flowing a fluorine-containing precursor into a remote plasma region of the semiconductor processing chamber;
• forming a plasma of the fluorine-containing precursor in the remote plasma region;
• etching in a first etch process a pre-determined amount of a silicon-containing material from a substrate in a processing region of the semiconductor processing chamber;
• measuring a radical density within the remote plasma region during the etching;
• halting the flow of the hydrogen-containing precursor into the semiconductor processing chamber when the radical density measured over time correlates to a produced amount of etchant to remove the pre-determined amount of the silicon-containing material;
• removing the substrate from the semiconductor processing chamber;
• forming a plasma of a fluorine-containing precursor in the semiconductor processing chamber;
• measuring a radical density of the hydrogen-containing precursor;
• extinguishing the plasma of the fluorine-containing precursor when the radical density of the hydrogen-containing precursor reaches a pre-determined threshold;
• and
• performing a second etch process.