Wafer quality inspection method and apparatus, and semiconductor device manufacturing method including the wafer quality inspection method
AssigneeSamsung Electronics Co., Ltd.
InventorsJong-Hyun Choi, Seok-Bae Moon, Jae-Hyuk Choi, Won-Ki Park, Jong-Hwi Seo
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Abstract
A method of inspecting a wafer quality includes injecting ions into a wafer using an ion beam in an ion implantation process, collecting data about the ion beam by using a Faraday cup, extracting first data from the data about the ion beam, extracting a wafer section from the first data, calculating a feature value of a wafer from the wafer section, and evaluating a quality of the wafer by comparing the feature value with a predetermined threshold or range.
Claims24
A method of inspecting a wafer quality, the method comprising:
- injecting ions into a wafer using an ion beam in an ion implantation process;
- collecting data about the ion beam by using a Faraday cup;
- extracting first data from the data about the ion beam;
- extracting a wafer section from the first data;
- calculating a feature value of the wafer from the wafer section;
- and
- evaluating a quality of the wafer by comparing the feature value with a predetermined threshold or range.
The method of claim I, wherein the extracting of the first data comprises:
- removing second data from the data about the ion beam, wherein the second data is different from the first data;
- and
- performing a preprocess of extracting an outline of the first data of the data about the ion beam after removing the second data.
The method of claim I, wherein the wafer section corresponds to a section regarding one wafer, and
- the feature value comprises at least one of an ion beam intensity, a block width of the wafer section, a total ion beam intensity of the wafer section, a uniformity of a top line of a block, a level of a base line of the block, a number of scanning times in the block, or a total ion beam intensity per unit time.
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A method of manufacturing a semiconductor device, the method comprising:
- collecting data about an ion beam by using a Faraday cup in an ion implantation process;
- extracting first data from the data about the ion beam;
- extracting a wafer section from the first data;
- calculating a feature value of a wafer from the wafer section;
- evaluating a quality of the wafer based on the feature value;
- and.
- performing a semiconductor process on the wafer when the quality of the wafer is normal,
- wherein the quality of the wafer is determined as normal by comparing the feature value with a predetermined threshold or range.
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18-26. (canceled)
Dependencies are inferred from the claim text.