US 2020/0091010 A1Published application

In-situ integrated chambers

AssigneeApplied Materials, Inc.

InventorsXuebin LI, Schubert S. CHU, Errol Antonio C. SANCHEZ, Patricia M. LIU, Gaurav THAREJA, Raymond HUNG

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Abstract

The systems and methods discussed herein are for a cluster tool that can be used for MOSFET device fabrication, including NMOS and PMOS devices. The cluster tool includes process chambers for pre-cleaning, metal-silicide or metal-germanide film formation, and surface protection operations such as capping and nitridation. The cluster tool can include one or more process chambers configured to form a source and a drain. The devices fabricated in the cluster tool are fabricated to have at least one protective layer formed over the metal-silicide or metal-germanide film to protect the film from contamination during handling and transfer to separate systems.

Claims20

Dependent claims

A computer-readable medium including instructions that are configured to cause a system to:

transfer a substrate from a transfer chamber into a pre-clean process chamber for a pre-clean operation;
execute the pre-clean operation in the pre-clean process chamber;
subsequent to the pre-clean operation, transfer the substrate from the pre-clean process chamber into a source/drain epitaxial deposition process chamber;
form a source and a drain on the substrate in the source/drain epitaxial deposition process chamber;
subsequent to the formation of the source and the drain in the source/drain epitaxial deposition process chamber, transfer the substrate from the source/drain epitaxial deposition process chamber into a film formation process chamber to form a metal-silicide or a metal-germanide on the source and the drain;
form the metal-silicide or the metal-germanide on the source and the drain in the film formation process chamber;
subsequent to the formation of the source and the drain, transfer the substrate from the film formation process chamber into a surface protection process chamber;
and
perform a surface protection operation in the surface protection process chamber.

6 more elements

A method of processing a substrate, comprising:

transferring, using a central transfer robot disposed in a transfer volume of a transfer chamber, a substrate into a first process chamber of a plurality of process chambers configured to perform at least one pre-clean operation;
performing the at least one pre-clean operation in the first process chamber;
subsequent to the at least one pre-clean operation, transferring the substrate from the first process chamber, through the transfer volume of the transfer chamber, and into a second process chamber of the plurality of process chambers, the second process chamber being configured to form a source and a drain on the substrate;
forming the source and the drain on the substrate in the second process chamber of the plurality of process chambers;
subsequent to the formation of the source and the drain, transferring the substrate from the second process chamber, through the transfer volume of the transfer chamber, and into a third process chamber of the plurality of process chambers, the third process chamber being configured to form a film on the source and the drain;
forming the film on the source and the drain in the third process chamber;
subsequent to the formation of the source and the drain, transferring the substrate from the third process chamber, through the transfer volume of the transfer chamber, and into a fourth process chamber of the plurality of process chambers, the fourth process chamber being configured to form a protective film on the source and the drain;
and
forming the protective film on the source and the drain in the fourth process chamber.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/559,227Filed 3 Sep 2019
Priority: 18 Sep 2018
Published: 19 Mar 2020
Term ends: Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10D 84/017
The components including complementary IGFETs, e.g. CMOS devices: manufacturing their source or drain regions, e.g. silicided source or drain regions
H10P 72/0604
Apparatus for monitoring, sorting, marking, testing or measuring: process monitoring, e.g. flow or thickness monitoring
H10D 30/0212
Of FETs having insulated gates [IGFET]: using self-aligned silicidation
H10D 84/038
Using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology: using silicon technology, e.g. SiGe