Pre-Deposition Treatment for FET Technology and Devices Formed Thereby

A semiconductor device comprising:

• a substrate;
• and
• a first device having a first gate structure over the substrate, wherein the first gate structure comprises:
• a first gate dielectric layer over the substrate;
• a first barrier layer over the first gate dielectric layer;
• a first monolayer of a first material on the first barrier layer, wherein the first material comprises aluminum oxide or silicon oxide;
• a first metal liner layer over the first monolayer of the first material;
• and
• a first gate electrode metal over the first metal liner layer;
• and
• a second device having a second gate structure over the substrate, wherein the second gate structure comprises:
• a second gate dielectric layer over the substrate;
• a second barrier layer over the second gate dielectric layer;
• a second work-function tuning layer over the second barrier layer;
• a second monolayer of the first material on the second work-function tuning layer;
• a second metal liner layer over the second monolayer of the first material, wherein the first metal liner layer and the second metal liner layer comprise a same material;
• and
• a second gate electrode metal over the second metal liner layer.

A semiconductor device comprising:

• a substrate;
• and
• a first device having a first gate structure over the substrate, wherein the first gate structure comprises:
• a first gate dielectric layer over the substrate;
• a first metal layer over the first gate dielectric layer;
• a first layer of aluminum oxide or silicon oxide directly on the first metal layer;
• a second metal layer directly on the first layer of aluminum oxide or silicon oxide;
• and
• a first gate electrode metal over the second metal layer;
• and
• a second device having a second gate structure over the substrate, wherein the second gate structure comprises:
• a second gate dielectric layer over the substrate;
• a third metal layer over the second gate dielectric layer;
• a second layer of aluminum oxide or silicon oxide directly on the third metal layer;
• a fourth metal layer directly on the second layer of aluminum oxide or silicon oxide, wherein the second metal layer and the fourth metal layer comprise a same first material, wherein the first metal layer and the third metal layer comprise different materials;
• and
• a second gate electrode metal over the fourth metal layer.