Jet ablation die singulation systems and related methods
AssigneeSemiconductor Components Industries, LLC
InventorMichael J. SEDDON
Life of this patent
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Abstract
Implementations of a method singulating a plurality of semiconductor die. Implementations may include: forming a pattern in a back metal layer coupled on a first side of a semiconductor substrate where the semiconductor substrate includes a plurality of semiconductor die. The method may include etching substantially through a thickness of the semiconductor substrate at the pattern in the back metal layer and jet ablating a layer of passivation material coupled to a second side of the semiconductor substrate to singulate the plurality of semiconductor die.
Claims20
A method of singulating a plurality of semiconductor die, the method comprising:
- forming a pattern using a photoresist in a back metal layer coupled on a first side of a semiconductor substrate, the semiconductor substrate comprising a plurality of semiconductor die;
- etching substantially through a thickness of the semiconductor substrate at the pattern in the back metal layer;
- and
- jet ablating a layer of passivation material coupled to a second side of the semiconductor substrate to singulate the plurality of semiconductor die.
A method of singulating a plurality of semiconductor die, the method comprising:
- forming a pattern in a back metal layer coupled on a first side of a semiconductor substrate, the semiconductor substrate comprising a plurality of semiconductor die, wherein the pattern is formed through a photolithography process;
- mounting the semiconductor substrate to a first tape;
- etching substantially through a thickness of the semiconductor substrate at the pattern in the back metal layer;
- and
- jet ablating a layer of passivation material coupled to a second side of the semiconductor substrate to singulate the plurality of semiconductor die.
Dependencies are inferred from the claim text.