Self-aligned gate cap including an etch-stop layer
AssigneeInternational Business Machines Corporation
InventorsMichael P. Belyansky, Marc Bergendahl, Victor W. C. Chan, JEFFREY C. SHEARER
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Abstract
According to embodiments of the present invention, a method of forming a self-aligned contact includes depositing an etch-stop liner on a surface of a gate cap and a contact region. A dielectric oxide layer is deposited onto the etch-stop layer. The dielectric oxide layer and the etch-stop liner are removed in a region above the contact region to form a removed region. A contact is deposited in the etched region.
Claims20
A method of forming a self-aligned contact, the method comprising:
- depositing an etch-stop liner on a surface of a gate cap and on a contact region;
- depositing a dielectric oxide layer onto the etch-stop layer;
- removing the dielectric oxide layer in a region above the contact region;
- removing the etch-stop layer in the region above the contact region to form a removed region;
- and
- depositing a contact in the etched region.
A method of forming a self-aligned gate cap, the method comprising:
- forming a gate on a substrate;
- forming a gate cap surrounding a side of the gate and located on a top surface of the gate opposite the substrate;
- forming a contact region self-aligned to the gate;
- forming a dielectric oxide on top of the gate;
- and
- forming an etch-stop layer between the dielectric oxide and the top surface of the gate cap.
Dependencies are inferred from the claim text.