Decoupled via fill
AssigneeIntel Corporation
InventorsYuriy V. SHUSTERMAN, Flavio GRIGGIO, Tejaswi K. INDUKURI, Ruth A. BRAIN
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AssigneeIntel Corporation
InventorsYuriy V. SHUSTERMAN, Flavio GRIGGIO, Tejaswi K. INDUKURI, Ruth A. BRAIN
Estimating the term…
Techniques are disclosed for providing a decoupled via fill. Given a via trench, a first barrier layer is conformally deposited onto the bottom and sidewalls of the trench. A first metal fill is blanket deposited into the trench. The non-selective deposition is subsequently recessed so that only a portion of the trench is filled with the first metal. The previously deposited first barrier layer is removed along with the first metal, thereby re-exposing the upper sidewalls of the trench. A second barrier layer is conformally deposited onto the top of the first metal and the now re-exposed trench sidewalls. A second metal fill is blanket deposited into the remaining trench. Planarization and/or etching can be carried out as needed for subsequent processing. Thus, a methodology for filling high aspect ratio vias using a dual metal process is provided. Note, however, the first and second fill metals may be the same.
An integrated circuit, comprising:
Dependencies are inferred from the claim text.