Method Of Forming Via With Embedded Barrier
AssigneeApplied Materials, Inc.
InventorsSang Ho Yu, Seshadri Ganguli
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Abstract
Methods for forming barrier/seed layers for interconnect structures are provided. More specifically, methods of depositing a film on a substrate having an opening formed in a first surface of the substrate, the opening having a sidewall with a dielectric surface and a bottom with a conductive surface. A manganese-ruthenium film is formed in the opening in the first surface of the substrate on the conductive surface.
Claims20
A method of depositing a film, the method comprising:
- positioning a substrate in a processing chamber, the substrate having an opening in a first surface, the opening having a sidewall with a dielectric surface and a bottom with a conductive surface;
- and
- forming a manganese-ruthenium film by exposing the substrate to one or more metal precursor comprising one or more of manganese (Mn) or ruthenium (Ru) to form a manganese-ruthenium film in the opening in the first surface of the substrate on the conductive surface;
- and
- depositing a conductive material on the manganese-ruthenium film to fill the opening in the first surface of the substrate forming a via.
A method of processing a substrate having an opening formed in a first surface of the substrate, the opening having a sidewall and a bottom, the method comprising:
- forming a first manganese-ruthenium film on a dielectric surface of the sidewall and on a conductive surface of the bottom of the opening by exposing the substrate to one or more metal precursor comprising one or more of manganese or ruthenium;
- forming a second manganese-ruthenium film on the first manganese-ruthenium film by exposing the substrate to one or more metal precursor comprising one or more of manganese or ruthenium;
- forming a third manganese-ruthenium film on the second manganese-ruthenium film by exposing the substrate to one or more metal precursor comprising one or more of manganese or ruthenium;
- and
- depositing a conductive material on the third manganese-ruthenium film to fill the opening forming a via.
An electronic device comprising
- a substrate having a feature formed in a first surface, the feature extending into the substrate from the first surface and having a sidewall with a dielectric surface and a bottom with a conductive surface;
- a manganese-ruthenium film in the bottom of the feature on the conductive surface;
- and
- a conductive material on the manganese-ruthenium film filling the feature to form a via.
Dependencies are inferred from the claim text.