Method for preparing semiconductor structures
AssigneeNanya Technology Corporation
InventorSHING-YIH SHIH
Life of this patent
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Abstract
The present disclosure provides a method for preparing semiconductor structures. The method includes the following steps. A substrate is provided. A plurality of first trenches are formed in the substrate. A first initially-flowable layer is formed in the plurality of first trenches. A top surface of the first initially-flowable layer is lower than openings of the plurality of first trenches. A first treatment is performed on the first initially-flowable layer to form a first dielectric layer in the plurality of first trenches. A second initially-flowable layer is formed to fill the plurality of first trenches. A second treatment is performed on the second initially-flowable layer to form a second dielectric layer in the plurality of first trenches.
Claims18
A method for preparing semiconductor structures, comprising:
- providing a substrate;
- forming a plurality of first trenches in the substrate;
- forming a first layer in the plurality of first trenches, wherein a top surface of the first initially-flowable layer is lower than openings of the plurality of first trenches;
- performing a first treatment on the first initially-flowable layer to form a first dielectric layer in the plurality of first trenches;
- forming a second initially-flowable layer to fill the plurality of first trenches;
- and
- performing a second treatment on the second initially-flowable layer to form a second dielectric layer in the plurality of first trenches.
Dependencies are inferred from the claim text.