Semiconductor Device, Method, and Multi-Wafer Deposition Apparatus
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorYung-Chang Chang
Life of this patent
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Abstract
An embodiment is a method. The method includes: dispensing a plurality of precursor materials over a collective wafer platter holding a plurality of wafers; heating the collective wafer platter while dispensing the precursor materials; rotating the collective wafer platter around a first axis while dispensing the precursor materials and heating the collective wafer platter; rotating the wafers around respective second axes while dispensing the precursor materials and heating the collective wafer platter, the first axis different from each of the second axes; and singulating integrated circuit devices from each of the wafers.
Claims20
A method comprising:
- dispensing a plurality of precursor materials over a collective wafer platter holding a plurality of wafers;
- heating the collective wafer platter while dispensing the precursor materials;
- rotating the collective wafer platter around a first axis while dispensing the precursor materials and heating the collective wafer platter;
- rotating the wafers around respective second axes while dispensing the precursor materials and heating the collective wafer platter, the first axis different from each of the second axes;
- and
- singulating integrated circuit devices from each of the wafers.
A method of forming a semiconductor structure, comprising:
- disposing a plurality of wafers on a collective wafer platter in a deposition chamber, each of the plurality of wafers being disposed on a respective individual wafer platter;
- rotating the collective wafer platter around a first axis and rotating the individual wafer platters around second axes, the first axis different from each of the second axes;
- and
- while rotating the collective wafer platter and the individual wafer platters, heating the collective wafer platter and performing a deposition of a material layer over the wafers, the performing the deposition of the material layer comprising dispensing a first precursor material and a second precursor material over the collective wafer platter, the first precursor material comprising silicon, the second precursor material comprising nitrogen.
A method of forming a FinFET, comprising:
- forming a fin on a substrate;
- forming a shallow trench isolation (STI) region adjacent the fin on the substrate;
- depositing a gate electrode over the fin;
- etching the gate electrode to form a recess;
- disposing the substrate on an individual wafer platter, the individual wafer platter being coupled to a collective wafer platter;
- disposing one or more additional wafers on respective one or more individual wafer platters, the respective one or more individual wafer platters being coupled to the collective wafer platter;
- dispensing a plurality of precursor materials over the collective wafer platter;
- heating the collective wafer platter while dispensing the precursor materials;
- rotating the collective wafer platter around a first axis while dispensing the precursor materials and heating the collective wafer platter;
- and
- rotating the substrate and the one or more additional wafers around respective second axes while dispensing the precursor materials and heating the collective wafer platter, the first axis being different from each of the second axes.
Dependencies are inferred from the claim text.