Method of manufacturing semiconductor device
AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorsHisashi Onodera, Hiroki Inoue
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device according to an embodiment includes forming a bonding layer containing a metal on a first surface of a first semiconductor substrate having the first surface and a first back surface; bonding the first semiconductor substrate and a second semiconductor substrate having a second surface and a second back surface so that the second surface is in contact with the bonding layer; and forming a coating layer covering the bonding layer on an outer peripheral portion of the second semiconductor substrate.
Claims11
A method of manufacturing a semiconductor device, comprising:
- forming a bonding layer containing a metal on a first surface of a first semiconductor substrate having the first surface and a first back surface;
- bonding the first semiconductor substrate and a second semiconductor substrate having a second surface and a second back surface so that the second surface is in contact with the bonding layer;
- and
- forming a coating layer covering the bonding layer on an outer peripheral portion of the second semiconductor substrate.
Dependencies are inferred from the claim text.