Semiconductor devices
AssigneeSamsung Electronics Co., Ltd.
InventorsWon-Jun LEE, Da-Hye SHIN, Yil-Hyung LEE
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Abstract
A semiconductor device includes a conductive structure on a substrate, an etch stop layer on the conductive structure, an insulation layer on the etch stop layer, and a contact plug extending through the etch stop layer and the insulation layer and contacting the conductive structure. The contact plug may include first and second conductive pattern structures sequentially stacked and contacting with each other. A width of an upper surface of the first conductive pattern structure may be greater than that of a lower surface of the second conductive pattern structure. At least an upper portion of the first conductive pattern structure may have a sidewall not perpendicular but inclined to an upper surface of the substrate.
Claims20
A semiconductor device, comprising:
- a conductive structure on a substrate;
- an etch stop layer on the conductive structure;
- an insulation layer on the etch stop layer;
- and
- a contact plug extending through the etch stop layer and the insulation layer and contacting the conductive structure,
- wherein the contact plug includes first and second conductive pattern structures sequentially stacked and contacting each other, a width of an upper surface of the first conductive pattern structure is greater than that of a lower surface of the second conductive pattern structure, and at least an upper portion of the first conductive pattern structure has a sidewall not perpendicular but inclined to an upper surface of the substrate.
A semiconductor device, comprising:
- a conductive structure on a substrate;
- an etch stop layer on the conductive structure;
- an insulation layer on the etch stop layer;
- and
- a contact plug extending through the etch stop layer and the insulation layer in a vertical direction substantially perpendicular to an upper surface of the substrate, and contacting the conductive structure,
- wherein the contact plug includes a protrusion portion at least at a central portion thereof in the vertical direction, the protrusion portion protruding in a horizontal direction substantially parallel to the upper surface of the substrate.
A semiconductor device, comprising:
- an insulating interlayer on a substrate, the insulating interlayer containing a conductive line therein;
- an etch stop layer on the conductive line and the insulating interlayer;
- an insulation layer on the etch stop layer;
- a contact plug extending through the etch stop layer and the insulation layer and contacting the conductive line;
- a lower electrode on the contact plug;
- an MTJ structure on the lower electrode;
- and
- an upper electrode on the MTJ structure,
- wherein the contact plug includes first and second conductive pattern structures, a width of an upper surface of the first conductive pattern structure is greater than that of a lower surface of the second conductive pattern structure, and at least an upper portion of the first conductive pattern structure has a sidewall not perpendicular but inclined to an upper surface of the substrate.
Dependencies are inferred from the claim text.