Crystalline transition metal dichalcogenide films and methods of making same
AssigneeUniversity of Dayton
InventorsChristopher Muratore, Michael E. McConney, Travis E. Shelton, Nicholas R. Glavin, John E. Bultman, Andrey A. Voevodin
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Abstract
Methods of making molybdenum sulfide (MoS2) on a stretchable substrate are disclosed. The method includes magnetron sputtering MoS2 onto a stretchable substrate, such as a stretchable polymeric material, at low temperatures to form a film precursor, and illumination annealing the film precursor to form high quality MoS2. The illumination source may be a laser or other source of radiation. Also, two-dimensional nanoelectronic devices made by the methods and/or from the high quality MoS2 are disclosed.
Claims15
A method for making a transition metal dichalcogenide film, the method comprising:
- providing a precursor film comprising an amorphous transition metal dichalcogenide film deposited on a substrate by a physical vapor deposition process at a temperature in a range from about 20° C. to about 250° C.;
- illumination-based annealing the precursor film, thereby changing the amorphous transition metal dichalcogenide film to a crystalline transition metal dichalcogenide film.
Dependencies are inferred from the claim text.