Substrate processing apparatus and method of producing semiconductor device
AssigneeToshiba Memory Corporation
InventorsYuya MATSUBARA, Masayuki Kitamura, Atsuko Sakata
Life of this patent
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Abstract
A substrate processing apparatus includes a chamber to accommodate a substrate. The apparatus includes a stage to support the substrate in the chamber. The apparatus includes an electrode disposed above the stage and containing aluminum. The electrode generates plasma from gas supplied into the chamber to form a first film on the substrate by the plasma. The apparatus further includes a second film formed on a surface of the electrode and containing aluminum and fluorine or containing aluminum and oxygen.
Claims19
A substrate processing apparatus comprising:
- a chamber configured to accommodate a substrate;
- a stage configured to support the substrate in the chamber;
- an electrode disposed above the stage and comprising aluminum, the electrode being configured to generate plasma from gas supplied into the chamber to form a first film on the substrate by the plasma;
- and
- a second film formed on a surface of the electrode and comprising aluminum and fluorine or comprising aluminum and oxygen.
A substrate processing apparatus comprising:
- a chamber configured to accommodate a substrate;
- a stage configured to support the substrate in the chamber;
- an electrode disposed above the stage and configured to generate plasma from gas supplied into the chamber to form a first film on the substrate by the plasma, the first film comprising first atoms, which are metal atoms;
- and
- a second film formed on a surface of the electrode and comprising aluminum and second atoms other than aluminum,
- wherein when the first atoms, a number of the first atoms being N, are bonded to the second atoms, a number of the second atoms being M, to form molecules, a formation enthalpy of the molecules formed by bonding the N first atoms to the M second atoms is −100 kJ/mol or less, N and M being integers of 1 or more.
A method of producing a semiconductor device, the method comprising:
- accommodating a substrate in a chamber;
- supporting the substrate in the chamber by a stage;
- and
- generating, by an electrode, plasma from gas supplied into the chamber to form a first film on the substrate by the plasma, the electrode being disposed above the stage and having a surface on which a second film is formed, the first film comprising first atoms, which are metal atoms, the second film comprising aluminum and second atoms other than aluminum,
- wherein when the first atoms, a number of the first atoms being N, are bonded to the second atoms, a number of the second atoms being M, to form molecules, a formation enthalpy of the molecules formed by bonding the N first atoms to the M second atoms is −100 kJ/mol or less, N and M being integers of 1 or more.
Dependencies are inferred from the claim text.