Filling a cavity in a substrate using sputtering and deposition

A processing apparatus comprising:

• a plasma chamber to receive a sputtering gas flow from a first gas source and a reactive precursor gas flow from a second gas source;
• a process chamber disposed adjacent the process chamber and housing a substrate, the substrate comprising a cavity having a sidewall portion and a lower surface;
• a plasma generator coupled to the plasma chamber and generating a plasma comprising sputtering gas derived from the sputtering gas flow and a reactive species derived from the reactive precursor gas flow, the reactive species generating a fill material at the substrate;
• an extraction plate disposed between the plasma chamber and substrate and comprising an extraction aperture;
• a bias voltage source generating a bias voltage according to a bias voltage signal between the substrate and plasma chamber, wherein an angled ion beam is directed to the substrate through the extraction plate, the angled ion beam comprising angled ions incident at a surface of the substrate at a non-zero angle of incidence with respect to a perpendicular to a plane defined by the substrate;
• and
• a controller coupled to the bias voltage source, the plasma generator, the first gas source, and second gas source, the controller including a component to control the bias voltage signal, the reactive precursor gas flow, the sputtering gas flow, wherein the cavity is filled by the fill material in a bottom-up fill process.