Systems and processes for plasma tuning

A method of forming a plasma within a semiconductor processing chamber, the method comprising:

• flowing a precursor into a processing region of the semiconductor processing chamber, the processing region being at least partially defined by a pedestal configured to support a substrate, wherein:
• the pedestal comprises an electrode operable to form a plasma within the processing region of the semiconductor processing chamber, the processing region at least partially defined by the pedestal,
• the pedestal comprises a heater embedded within the pedestal,
• the heater is coupled with a power supply,
• an RF filter is coupled between the power supply and the heater, and
• a shunt capacitor is coupled between the RF filter and the heater;
• and
• forming a plasma of the precursor to produce plasma effluents.

A semiconductor processing system comprising:

• a pedestal positioned within a semiconductor processing chamber and configured to support a substrate, wherein:
• the pedestal comprises an electrode operable to form a plasma within a processing region of the semiconductor processing chamber, the processing region at least partially defined by the pedestal,
• the pedestal comprises a ceramic;
• the electrode is coupled with an RF generator configured to operate at 13.56 MHz;
• the pedestal comprises a heater embedded within the pedestal,
• the heater is coupled with an AC power supply,
• an RF filter is coupled between the AC power supply and the heater,
• a shunt capacitor is coupled between the RF filter and the heater, and
• the shunt capacitor is electrically coupled as a bypass between the RF filter and the heater.