Slow wave inductive structure and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsiao-Tsung YEN, Cheng-Wei LUO
Life of this patent
Estimating the term…
Abstract
A slow wave inductive structure includes a first substrate. The slow wave inductive structure further includes a first conductive winding over the first substrate. The slow wave inductive structure further includes a second substrate over the first substrate, wherein a distance between the first conductive winding and the second substrate ranges from about 1 micron (μm) to about 2 μm, and the second substrate comprises polysilicon or doped silicon. The slow wave inductive structure further includes a second conductive winding on an opposite side of the second substrate from the first conductive winding.
Claims20
A slow wave inductive structure comprising:
- a first substrate;
- a first conductive winding over the first substrate;
- a second substrate over the first substrate, wherein a distance between the first conductive winding and the second substrate ranges from about 1 micron (μm) to about 2 μm, and the second substrate comprises polysilicon or doped silicon;
- and
- a second conductive winding on an opposite side of the second substrate from the first conductive winding.
A slow wave inductive structure comprising:
- a first substrate;
- a first conductive winding over the first substrate;
- a second substrate over the first substrate;
- and
- a second conductive winding over the second substrate, wherein the first conductive winding is configured to be selectively connected to the second conductive winding.
A method of making a slow wave inductive structure, the method comprising:
- depositing a first dielectric layer over a first substrate;
- forming a first conductive winding in the first dielectric layer;
- bonding a second substrate to the first dielectric layer, wherein the second substrate is physically separated from the first conductive winding, and the second substrate has a thickness ranging from about 50 nanometers (nm) to about 150 nm;
- depositing a second dielectric layer over the second substrate;
- and
- forming a second conductive winding in the second dielectric layer, wherein the second substrate is physically separated from the second conductive winding.
Dependencies are inferred from the claim text.