Magnetic memory
AssigneeToshiba Memory Corporation
InventorYoshihiro Ueda
Life of this patent
Estimating the term…
Abstract
A magnetic memory included a conductive line that extends in a first direction along a substrate. A first columnar body is in a memory cell array region of the substrate and extends in a second direction from the substrate. A first end of the first columnar body contacts the conductive line. The first columnar body is comprised of a first magnetic material and has magnetic domains adjacent to one another along a length of the first columnar body in the second direction. A second columnar body is in a peripheral region of the substrate and extending in the second direction from the substrate. A first end of the second columnar body contacts the conductive line, and a second end is connected to a control circuit. The second columnar body also is comprised of the first magnetic material.
Claims22
A magnetic memory, comprising:
- a conductive line that extends in a first direction along a substrate;
- a first columnar body in a memory cell array region of the substrate, extending in a second direction from the substrate, a first end of the first columnar body contacting the conductive line, the first columnar body comprising a first magnetic material and a plurality of magnetic domains adjacent to one another along a length of the first columnar body in the second direction;
- and
- a second columnar body in a peripheral region of the substrate, extending in the second direction from the substrate, a first end of the second columnar body contacting the conductive line, and a second end of the second columnar body connected to a control circuit, the second columnar body comprising the first magnetic material.
A magnetic memory device, comprising:
- a control circuit;
- a plurality of conductive lines that extends in a first direction along a substrate;
- a plurality of first columnar bodies in a memory cell array region of the substrate, each first columnar body extending in a second direction from the substrate, a first end of each first columnar body contacting one of the plurality of conductive lines, each first columnar body comprising a first magnetic material and a plurality of magnetic domains adjacent to one another along a length of the first columnar body in the second direction;
- and
- a plurality of second columnar bodies in a peripheral region of the substrate, each second columnar body extending in the second direction from the substrate and having a first end contacting one of the plurality of conductive lines and a second end connected to the control circuit, each second columnar body comprising the first magnetic material, wherein
- the control circuit is configured to supply a shift current to the plurality of first columnar bodies via a conductance path including at least one of the plurality of second columnar bodies.
A magnetic memory device, comprising:
- a control circuit;
- a conductive line that extends in a first direction along a substrate;
- a first columnar body in a memory cell array region of the substrate, extending in a second direction from the substrate, a first end of the first columnar body contacting the conductive line, the first columnar body comprising a first magnetic material and a plurality of magnetic domains adjacent to one another along a length of the first columnar body in the second direction;
- a second columnar body in a peripheral region of the substrate, extending in the second direction from the substrate, a first end of the second columnar body contacting the conductive line, and a second end of the second columnar body connected to the control circuit, the second columnar body comprising the first magnetic material;
- a magnetic tunnel junction element on a second end of the first columnar body;
- a field line connected to the control circuit and passing near the second end of the first columnar body;
- and
- a bit line connected to the magnetic tunnel junction element, wherein
- the control circuit is configured to write data to the first columnar body by application of voltage to the field line and to shift a domain of the first column body in the second direction by application of a current to the first columnar body via conductance path including the second columnar body and the conductive line.
A magnetic memory, comprising:
- a conductive line that extends in a first direction along a substrate;
- a first columnar body in a memory cell array region of the substrate, extending in a second direction from the substrate, a first end of the first columnar body contacting the conductive line, the first columnar body comprising a first magnetic material;
- and
- a second columnar body in a peripheral region of the substrate, extending in the second direction from the substrate, a first end of the second columnar body contacting the conductive line, and a second end of the second columnar body connected to a control circuit, the second columnar body comprising the first magnetic material.
Dependencies are inferred from the claim text.