Semiconductor memory device and data writing method

A data writing method for performing writing of data with respect to a semiconductor memory device including a plurality of memory cells and a plurality of word lines connected to the plurality of memory cells, respectively, the data writing method comprising:

• selecting a first word line among the words lines;
• applying a program voltage to the selected first word line while stepping up a value of the program voltage;
• applying a first pass voltage to a second word line among the word lines different from the first word line, when applying the program voltage having a voltage value equal to or greater than a predetermined value to the first world line;
• and
• applying a second pass voltage having a voltage value higher than the first pass voltage to the second word line when applying the program voltage having a voltage value less than the predetermined voltage value to the first word line.

A data writing method for performing writing of data with respect to a semiconductor memory device including a plurality of memory cells and a plurality of word lines connected to the plurality of memory cells, respectively, the data writing method comprising:

• selecting a first word line among the words lines;
• simultaneously applying a program voltage to the selected first word line having a voltage value equal to or greater than a predetermined value, and applying a first pass voltage to a second word line among the word lines different from the first word line;
• and
• simultaneously applying the program voltage to the first word line having a voltage value less than the predetermined value, and applying a second pass voltage having a voltage value higher than the first pass voltage to the second word line.