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US 2020/0090747 A1Published application
Circuitry and methods for programming resistive random access memory devices
AssigneeMicrosemi SoC Corporation
InventorJohn L. McCollum
Life of this patent
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Abstract
A method for programming a ReRAM cell including a ReRAM device connected in series with an access transistor includes biasing the ReRAM cell with a programming potential that configures the access transistor in a common-source configuration and applying at least one programming voltage pulse to a gate of the access transistor, the programming voltage pulse having a magnitude selected to limit programming current to a preselected value.
Claims8
A ReRAM cell comprising:
- an output node coupled to a current source;
- a ReRAM device having an ion source end and a solid electrolyte end, the ion source end coupled to an output node;
- and
- an access transistor coupled between a first bitline associated with the memory cell and the solid electrolyte end of the ReRAM device, the access transistor having gate coupled to a wordline associated with the memory cell.
1 more element
A ReRAM cell comprising:
- a first bitline;
- a second bitline;
- an output node;
- a pullup ReRAM device having an ion source end and a solid electrolyte end, the solid electrolyte end coupled to the first bitline;
- a first access transistor coupled between the ion source end of the pullup ReRAM device and the output node;
- a pulldown ReRAM device having an ion source end and a solid electrolyte end, the ion source end coupled to the second bitline;
- and
- a second access transistor coupled between the solid electrolyte end of the pulldown ReRAM device and the output node.
5 more elements
Dependencies are inferred from the claim text.