Memory system and control method of memory system

A memory system comprising:

• a magnetoresistive random access memory (MRAM);
• a memory controller configured to control access of data to the MRAM;
• a temperature sensor configured to measure a temperature of the memory system;
• and
• a magnetic sensor configured to measure an intensity of a magnetic field of the memory system,
• wherein write/erase count information indicating a write/erase count of the MRAM, patrol read execution time information including a previous patrol read execution time, and patrol read information specifying the patrol read execution time interval for combinations of a temperature, an intensity of a magnetic field, and a write/erase count are stored in the MRAM, and
• wherein the memory controller is configured to:
• acquire the temperature from the temperature sensor,
• acquire the intensity of the magnetic field from the magnetic sensor,
• acquire from the patrol read information the patrol read execution time interval corresponding to the combination of the temperature, the intensity of the magnetic field, and the write/erase count, and
• determine whether or not a patrol read shall be executed by comparing the elapsed time from the previous patrol read execution time with the acquired patrol read execution time interval.